STRUCTURAL IMPROVEMENT OF NANOROD RESISTIVE MEMORY
Eddie SHIH | Taiwan
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STRUCTURAL IMPROVEMENT OF NANOROD RESISTIVE MEMORY
Eddie SHIH
Taiwan
The present invention is a structure of nanorod resistive memory. The structure of the upper electrode, zinc oxide nanorod, High-K material film, lower electrode, oxide layer and silicon substrate of this resistive memory The special bipolar resistance conversion phenomenon of the column can increase the resistance change ratio and reduce the switching voltage, strengthen the memory time and endur
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