7T STATIC RANDOM ACCESS MEMORY WITH FAST READ / WRITE SPEED

Eddie SHIH | Taiwan

7T STATIC RANDOM ACCESS MEMORY WITH FAST READ / WRITE SPEED

Eddie SHIH

Taiwan

Detail

An innovative negative bit-line supply circuit in combination with a word line driver as well as a low-voltage control circuit effectively improves the writing data “0” speed up to 59.3%, as compared to prior arts.